Method for manufacturing photoelectric conversion device

A method for manufacturing a photoelectric conversion device comprising:

• forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate;
• forming a first impurity silicon layer on the one surface side in the single crystal silicon substrate;
• forming a first electrode over the first impurity silicon layer;
• disposing a supporting substrate and the single crystal silicon substrate so that one surface of the supporting substrate and the one surface of the single crystal silicon substrate face each other;
• bonding the single crystal silicon substrate with the supporting substrate with at least the first impurity silicon layer and the first electrode interposed therebetween;
• forming a single crystal silicon layer over the supporting substrate by separating the single crystal silicon substrate along the fragile layer or vicinity of the fragile layer with heat treatment;
• performing crystal defect elimination treatment of the single crystal silicon layer;
• forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure;
• and
• forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxial grown.

A method for manufacturing a photoelectric conversion device comprising:

• forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate;
• forming a first impurity silicon layer on the one surface side in the single crystal silicon substrate;
• forming a first electrode over the first impurity silicon layer;
• forming an insulating layer over the first electrode;
• disposing a supporting substrate and the single crystal silicon substrate so that one surface of the supporting substrate and the one surface of the single crystal silicon substrate face each other;
• bonding the single crystal silicon substrate with the supporting substrate with at least the first impurity silicon layer and the first electrode interposed therebetween;
• forming a single crystal silicon layer over the supporting substrate by separating the single crystal silicon substrate along the fragile layer or vicinity of the fragile layer with heat treatment;
• performing crystal defect repair treatment of the single crystal silicon layer;
• forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure;
• and
• forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxial grown.

A method for manufacturing a photoelectric conversion device comprising:

• forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate;
• forming a first impurity silicon layer on the one surface side in the single crystal silicon substrate;
• forming a first electrode over the first impurity silicon layer;
• forming an insulating layer over the first electrode;
• disposing a supporting substrate and the single crystal silicon substrate so that one surface of the supporting substrate and the one surface of the single crystal silicon substrate face each other;
• bonding the single crystal silicon substrate with the supporting substrate with at least the first impurity silicon layer and the first electrode interposed therebetween;
• forming a single crystal silicon layer over the supporting substrate by separating the single crystal silicon substrate along the fragile layer or vicinity of the fragile layer with heat treatment;
• performing crystal defect elimination treatment of the single crystal silicon layer;
• forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure;
• and
• forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxial grown.

A method for manufacturing a photoelectric conversion device comprising:

• preparing a single crystal silicon layer over a stack of a substrate, a first electrode, and a first impurity silicon layer;
• performing crystal defect repair treatment of the single crystal silicon layer;
• forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure;
• and
• forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxially grown.

A method for manufacturing a photoelectric conversion device comprising:

• preparing a single crystal silicon layer over a stack of a substrate, a first electrode, and a first impurity silicon layer;
• performing crystal defect elimination treatment of the single crystal silicon layer;
• forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure;
• and
• forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxially grown.