Select devices including an open volume, memory devices and systems including same, and methods for forming same
AssigneeMicron Technology, Inc.
InventorsBhaskar Srinivasan, Gurtej S. Sandhu
Life of this patent
Estimating the term…
Abstract
Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.
Claims20
A method of forming a select device, comprising:
- forming at least one opening extending through a conductive material, a dielectric material, and another dielectric material and exposing a surface of a metal underlying an entire length of the dielectric material to form a plurality of discrete structures on the surface of the metal;
- removing a portion of the another dielectric material to form at least one undercut comprising an open volume extending under a portion of the dielectric material of each of the plurality of discrete structures;
- and
- forming spacers over sidewalls of each of the plurality of discrete structures to enclose the open volume.
A method of forming a select device, comprising:
- forming at least one structure comprising a conductive material overlying a dielectric material and another dielectric material, the at least one structure extending from a surface of a metal underlying an entire length of the another dielectric material;
- removing a portion of the another dielectric material underlying the dielectric material to form an open volume between opposing surfaces of the dielectric material and the metal;
- and
- forming spacers over sidewalls of the at least one structure bounding the open volume.
A method of forming a select device, comprising:
- forming a plurality of openings extending through a metal, a dielectric material, and another dielectric material and exposing a surface of another metal underlying an entire length of the another dielectric material;
- applying a spacer material over sidewalls of structures adjacent each of the plurality of openings and over surfaces of the metal and the another metal;
- removing a portion of the spacer material to expose a portion of the another dielectric material of the structures;
- and
- removing at least a portion of the another dielectric material to form an open volume between opposing surfaces of the dielectric material and the another metal.
A method of forming a select device, comprising:
- forming at least one structure defined by sidewalls of a conductive material, a first dielectric material, and a second dielectric material, the at least one structure extending from a surface of a metal underlying and contacting an entire length of the second dielectric material;
- removing material from a portion of the sidewalls defined by the second dielectric material without substantially removing material of the sidewalls defined by the overlying first dielectric material to form an open volume between opposing surfaces of the first dielectric material and the metal;
- and
- enclosing the open volume of the at least one structure with a third dielectric material.
Dependencies are inferred from the claim text.