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US 8,008,155 B2Granted
Gate electrode structure
AssigneeSamsung Electronics Co., Ltd.
InventorsJaeman Yoon, Yungi Kim, Hyeoungwon Seo, Kangyoon Lee
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Abstract
An electrode structure, e.g., a gate electrode for a transistor, includes: a volume of semiconductor material; a gate oxide on the semiconductor volume; a barrier layer, including silicon nitride, on the gate oxide layer; an adhesion layer on the barrier layer; and a metallic layer on the adhesion layer.
Claims9
A method of forming an electrode structure, the method comprising:
- providing a semiconductor substrate;
- forming layers of a laminated structure by doing at least the following,
- forming a gate oxide layer directly on the semiconductor substrate,
- forming a barrier layer, on the gate oxide layer, the barrier layer that includes silicon nitride,
- forming an adhesion layer on the barrier layer, and
- forming a metal layer on the adhesion layer;
- patterning a mask onto the metal layer of the laminated structure;
- and
- selectively removing portions of the layers of the laminated structure not underlying the mask,
- wherein forming layers of the laminated structure further includes:
- heat treating the laminated structure and the semiconductor substrate to transform the adhesion layer so as to include a metal oxide.
8 more elements
Dependencies are inferred from the claim text.