Methods of fabricating nonvolatile memory devices having gate structures doped by nitrogen
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Hyun Lee, Dong-Gun Park
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Abstract
Nonvolatile memory devices are provided including an integrated circuit substrate and a charge storage pattern on the integrated circuit substrate. The charge storage pattern has a sidewall and a tunnel insulating layer is provided between the charge storage pattern and the integrated circuit substrate. A gate pattern is provided on the charge storage pattern. A blocking insulating layer is provided between the charge storage pattern and the gate pattern. The sidewall of the charge storage pattern includes a first nitrogen doped layer. Related methods of fabricating nonvolatile memory devices are also provided herein.
Claims4
A method of forming a nonvolatile memory device comprising:
- forming a trench device isolation region on an integrated circuit substrate, the trench device isolation region defining an active region;
- and
- forming a gate electrode crossing over the active region, wherein forming the trench device isolation region comprising forming a nitrogen doped layer in an upper portion of a trench sidewall in the trench isolation region, wherein the upper portion of the trench sidewall comprises the integrated circuit substrate.
Dependencies are inferred from the claim text.