Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsYuuichi Kamimuta, Akira Nishiyama, Yasushi Nakasaki, Tsunehiro Ino, Masato Koyama
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Abstract
It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.
Claims6
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film provided above the semiconductor substrate;
- a first gate electrode provided above the gate insulating film;
- an interelectrode insulating film provided above the first gate electrode and containing a metal, oxygen, and an additive element;
- a second gate electrode provided above the interelectrode insulating film;
- and
- source/drain regions provided in the semiconductor substrate on both sides of the first and second gate electrodes,
- wherein the additive element is at least one element selected from elements of Group 5 other than tantalum and niobium, Group 6, Group 15 other than nitrogen, phosphorus, and antimony, and Group 16, at a concentration of 0.003 atomic % or more but 3 atomic % or less.
Dependencies are inferred from the claim text.