Loading patent…
AssigneeAdvanced Technology Materials, Inc.
InventorsWilliam Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
Estimating the term…
Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
A method of fabricating a microelectronic device comprising germanium, said method comprising depositing germanium on a microelectronic device substrate by a vapor deposition process including contacting the microelectronic device substrate with a precursor vapor of a germanium precursor comprising germanium bis(n-butyl, N,N-diisopropylamidinate),
Dependencies are inferred from the claim text.