Thin film transistor and method for producing the same
AssigneeSony Corporation
InventorsMao Katsuhara, Nobuhide Yoneya
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Abstract
The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed.
Claims12
A method of manufacturing a thin film transistor, comprising:
- forming a protection film pattern made of at least one of a metal material and a carrier injection organic material on an organic semiconductor layer formed on a substrate;
- forming an organic semiconductor pattern on the substrate by patterning the organic semiconductor layer by etching using the protection film pattern as a mask,
- forming an electrode material film on the substrate so as to cover the organic semiconductor pattern;
- and
- forming a resist pattern on the electrode material film and forming a source electrode and a drain electrode by patterning the electrode material film by wet etching using the resist pattern as a mask.
Dependencies are inferred from the claim text.