Flat display active plate
AssigneesCentre National De La Recherche Scientifique, Ecole Polytechnique
InventorsDidier Pribat, Costel Sorin Cojocaru
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Abstract
A method for manufacturing the active plate of a flat matrix display screen, in which each cell comprises an electrode plate connected by a transistor to a first conductive line, comprising the steps of providing an outgrowth coated with an insulator of each first conductive line at the level of each cell; etching or making porous an end portion of each outgrowth; laterally growing, for example, by a VLS method, a PIP or NIN semiconductor structure in each end portion which has been etched or made porous; and establishing a contact at the free end of the semiconductor structure and forming a gate at the level of the median portion of the semiconductor structure.
Claims10
A method for manufacturing an active plate of a flat display screen comprising a matrix of cells, in which each cell of said matrix of cells comprises an electrode plate connected by a transistor to a first conductive line, said method comprising the steps of:
- providing, for each cell, an outgrowth coated with an insulator of said first conductive line;
- etching or making porous an end portion of said outgrowth;
- laterally growing a P-type-doped/intrinsic/P-type-doped (PIP) or N-type-doped/intrinsic/N-type-doped (NIN) semiconductor structure in the end portion which has been etched or made porous;
- and
- establishing a contact at a free end of the PIP or NIN semiconductor structure and forming a gate on a median portion of the PIP or NIN semiconductor structure.
An active plate of a flat display screen, comprising a matrix of cells, wherein each cell of said matrix of cells comprises an electrode plate connected by a transistor to a first conductive line, said transistor being formed in an outgrowth of the first conductive line coated with an insulator.
Dependencies are inferred from the claim text.