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US 8,008,103 B2Granted
Light emitting device having light extraction structure and method for manufacturing the same
AssigneesLG Innotek Co., Ltd., LG Electronics Inc.
InventorsHyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
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Abstract
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
Claims27
A method for manufacturing a light emitting device, comprising:
- growing a semiconductor structure having multi-layers over a substrate;
- forming a first electrode over a first surface of the semiconductor structure;
- providing a support layer on the first electrode;
- removing the substrate from a second surface of the semiconductor structure;
- forming a dielectric layer over the second surface of the semiconductor structure;
- forming a plurality of holes in the dielectric layer;
- forming a plurality of grooves in the semiconductor structure by using the dielectric layer as a mask, the grooves forming a rough surface through which light is extracted or a photonic crystal structure;
- removing the dielectric layer;
- and
- forming a second electrode over the second surface of the semiconductor structure.
7 more elements
Dependencies are inferred from the claim text.