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US 8,008,098 B2Granted
Light emitting device and method of manufacturing the same
AssigneeLG Innotek Co., Ltd.
InventorHwan Hee Jeong
Life of this patent
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Abstract
A method of manufacturing a light emitting device is provided. An epitaxial layer is first formed at a plurality of separated regions on a substrate and a second electrode layer is formed on the epitaxial layer. Subsequently, the substrate is removed from the epitaxial layer and a first electrode layer is formed under the epitaxial layer, after which the second electrode layer is divided into chip units.
Claims18
A method of manufacturing a light emitting device, the method comprising:
- providing a substrate;
- forming a plurality of separated regions on the substrate;
- forming an epitaxial layer including at least an active layer within each of the separated regions;
- forming a second electrode layer on the epitaxial layer;
- removing the substrate from the epitaxial layer;
- forming a first electrode layer under the epitaxial layer;
- and
- dividing the second electrode layer in chip units.
5 more elements
A light emitting device, comprising:
- a first electrode layer;
- an epitaxial layer on the first electrode layer;
- an ohmic contact layer on the epitaxial layer;
- and
- a second electrode layer on the epitaxial layer, the second electrode layer having a larger area than the epitaxial layer and having the same area as the ohmic contact layer.
2 more elements
Dependencies are inferred from the claim text.