ALD processing techniques for forming non-volatile resistive-switching memories
AssigneeIntermolecular, Inc.
InventorsNobi Fuchigami, Pragati Kumar, Prashant Phatak
Life of this patent
Estimating the term…
Abstract
ALD processing techniques for forming non-volatile resistive-switching memories are described. In one embodiment, a method includes forming a first electrode on a substrate, maintaining a pedestal temperature for an atomic layer deposition (ALD) process of less than 100° Celsius, forming at least one metal oxide layer over the first electrode, wherein the forming the at least one metal oxide layer is performed using the ALD process using a purge duration of less than 20 seconds, and forming a second electrode over the at least one metal oxide layer.
Claims20
A method for forming a non-volatile resistive switching memory element comprising:
- forming a first electrode on a substrate;
- maintaining a pedestal temperature for an atomic layer deposition (ALD) process of less than 100° Celsius;
- forming at least one metal oxide layer over the first electrode, wherein the forming the at least one metal oxide layer is performed using the ALD process using purge duration of less than 20 seconds;
- and
- forming a second electrode over the at least one metal oxide layer.
A non-volatile resistive-switching memory element comprising:
- a first electrode;
- an aluminum oxide resistive-switching layer over the first electrode formed from atomic layer deposition (ALD) using a pedestal temperature of less than 100° C. and a purge duration of less than 20 seconds;
- and
- a second electrode over the aluminum oxide resistive-switching layer.
A method comprising:
- forming a first electrode;
- maintaining a pedestal temperature for an atomic layer deposition (ALD) process of less than 100° Celsius;
- forming an aluminum oxide resistive-switching metal oxide layer using the ALD process over the first electrode;
- and
- forming a second electrode over the aluminum oxide resistive-switching metal oxide layer.
Dependencies are inferred from the claim text.