Acrylic polymer-containing gap fill material forming composition for lithography
AssigneeNissan Chemical Industries, Ltd.
InventorsSatoshi Takei, Kazuhisa Ishii, Takahiro Kishioka, Yasushi Sakaida
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Abstract
There is provided a gap fill material forming composition for lithography that is used in dual damascene process and is excellent in flattening property and fill property. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a semiconductor substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the semiconductor substrate by use of lithography process, and that comprises a polymer, a crosslinking agent and a solvent.
Claims6
A gap fill material forming composition comprising:
- a crosslinking agent having at least two crosslink-forming functional substituents;
- a solvent selected from the group consisting of butyl lactate, propylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and cyclohexanone;
- and
- a polymer having a weight average molecular weight of 5,000 to 20,000 and containing components having a molecular weight of 3,000 or less in a rate of 20% or less, the polymer consisting of a structural unit of formula (1)
- where R1 is a hydrogen atom, a methyl group, a chlorine atom or a bromine atom;
- R2 is a hydrogen atom or a hydroxy group;
- p is a number of 1, 2, 3 or 4;
- q is a number of 0, 1, 2 or 3;
- wherein the composition is used in manufacture of a semiconductor device by a method comprising coating a photoresist on a semiconductor substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the semiconductor substrate by use of a lithography process.
A gap fill material forming composition comprising:
- a crosslinking agent having at least two crosslink-forming functional substituents;
- a solvent selected from the group consisting of butyl lactate, propylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and cyclohexanone;
- and
- a polymer having a weight average molecular weight of 5,000 to 20,000 and containing components having a molecular weight of 3,000 or less in a rate of 20% or less, the polymer consisting of a structural unit of formula (1) and a structural unit of formula (2)
- where R1 is a hydrogen atom, a methyl group, a chlorine atom or a bromine atom;
- R2 is a hydrogen atom or an hydroxy group;
- p is a number of 1, 2, 3 or 4;
- and
- q is a number of 0, 1, 2 or 3;
- where R1 is as defined above;
- and
- R3 is a C 1-8 alkyl group, a benzyl group, a C1-6 alkyl group substituted by at least one fluorine atom, a chlorine atom, a bromine atom, or a C1-6 alkyl group substituted by at least one C1-6 alkoxy group,
- wherein:
- the polymer contains the structural unit of formula (1) in a molar ratio of 0.10 to 0.95;
- the composition is used in manufacture of a semiconductor device by a method comprising coating a photoresist on a semiconductor substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the semiconductor substrate by use of a lithography process;
- and
- a sum of the molar ratio of structural unit of formula (1) and the molar ratio of structural unit of formula (2) is 1.
Dependencies are inferred from the claim text.