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US 8,007,865 B2Granted
Atomic layer deposition (ALD) method and reactor for producing a high quality layer
AssigneeImec
InventorsAnnelies Delabie, Matty Caymax
Life of this patent
Estimating the term…
Abstract
One inventive aspect is related to an atomic layer deposition (ALD) method comprising: a) providing a semiconductor substrate in a reactor, b) providing a pulse of a first precursor gas into the reactor at a first temperature, c) providing a first pulse of a second precursor gas into the reactor at a second temperature, and d) providing a second pulse of the second precursor gas at a third temperature lower than the second temperature. Another inventive aspect relates to a reactor suitable to apply the method.
Claims20
An atomic layer deposition method comprising:
- providing a semiconductor substrate in a reactor;
- and
- conducting one or more atomic layer deposition cycles to deposit one or more monolayers of the same material, the conducting of one or more atomic layer deposition cycles comprising:
- providing, in each cycle, a pulse of a first precursor gas into the reactor at a first temperature,
- providing, in each cycle, a first pulse of a second precursor gas into the reactor at a second temperature, and
- providing, at least once during the cycles, a second pulse of the second precursor gas at a third temperature lower than the second temperature, the second pulse of the second precursor gas not being used to form a plasma,
- wherein only the first precursor gas and the second precursor gas are provided as precursors during the conducting of the atomic layer deposition cycles, and wherein the first precursor gas is provided only at the first temperature, wherein the first precursor gas comprises hafnium tetrachloride and the second precursor gas comprises H2O.
4 more elements
An atomic layer deposition method for depositing an hafnium oxide (HfO2) layer, comprising:
- providing a semiconductor substrate in a reactor;
- and
- forming one or more monolayers of HfO2 by atomic layer deposition, the forming of one or more monolayers of Hf2 comprising:
- providing a pulse of HfCl4 in the reactor at about 300° C.,
- providing a first pulse of H2O in the reactor at about 300° C.,
- providing a second pulse of H2O in the reactor at room temperature, while the substrate is exposed to an N2O plasma treatment.
3 more elements
An atomic layer deposition method comprising:
- providing a semiconductor substrate in a reactor;
- and
- conducting at least a first and second atomic layer deposition cycle to deposit one or more monolayers of the same material, the second cycle being performed after the first cycle,
- wherein the first cycle comprises:
- providing a pulse of a first precursor gas into the reactor at a first temperature,
- providing a first pulse of a second precursor gas into the reactor at a second temperature, and
- providing a second pulse of the second precursor gas at a third temperature lower than the second temperature,
- wherein the second cycle comprises:
- providing a pulse of the first precursor gas into the reactor at the first temperature, and
- providing a first pulse of the second precursor gas into the reactor at the second temperature,
- wherein the substrate is exposed to a plasma treatment during and/or after the providing of a second pulse of the second precursor gas, wherein the second precursor gas is H2O, and wherein the second pulse of the second precursor gas is provided while the substrate is exposed to an N2O plasma treatment.
8 more elements
An atomic layer deposition method comprising:
- providing a semiconductor substrate in a reactor;
- and
- conducting one or more atomic layer deposition cycles to deposit one or more monolayers of the same material, the conducting of one or more atomic layer deposition cycles comprising:
- providing, in each cycle, a pulse of a first precursor gas into the reactor at a first temperature,
- providing, in each cycle, a first pulse of a second precursor gas into the reactor at a second temperature, and
- providing, at least once during the cycles, a second pulse of the second precursor gas at a third temperature lower than the second temperature, the second pulse of the second precursor gas not being used to form a plasma,
- wherein only the first precursor gas and the second precursor gas are provided as precursors during the conducting of the atomic layer deposition cycles, and wherein the first precursor gas is provided only at the first temperature,
- wherein the first temperature and the second temperature are about 300° C., and the third temperature is room temperature.
5 more elements
An atomic layer deposition method comprising:
- providing a semiconductor substrate in a reactor;
- and
- conducting one or more atomic layer deposition cycles to deposit one or more monolayers of the same material, the conducting of one or more atomic layer deposition cycles comprising:
- providing, in each cycle, a pulse of a first precursor gas into the reactor at a first temperature,
- providing, in each cycle, a first pulse of a second precursor gas into the reactor at a second temperature,
- providing, at least once during the cycles, a second pulse of the second precursor gas at a third temperature lower than the second temperature, the second pulse of the second precursor gas not being used to form a plasma, and
- heating, at least once during the cycles, the substrate surface at a fourth temperature between the providing of a first pulse of a second precursor gas and the providing of a second pulse of the second precursor gas,
- wherein only the first precursor gas and the second precursor gas are provided as precursors during the conducting of the atomic layer deposition cycles, and wherein the first precursor gas is provided only at the first temperature,
- wherein the fourth temperature is about 500° C.
6 more elements
Dependencies are inferred from the claim text.