Semiconductor sensor having heater on insulation film and manufacturing method of the same
AssigneeDenso Corporation
InventorsRyuichirou Abe, Tsuyoshi Fukada, Keisuke Suzui
Life of this patent
Estimating the term…
Abstract
A sensor includes: a silicon substrate having a hollow portion, which is arranged on a backside of the substrate; an insulation film disposed on a front side of the substrate and covering the hollow portion; a heater disposed on the insulation film, made of a semiconductor layer, and configured to generate heat; and an anti-stripping film for protecting the insulation film from being removed from the silicon substrate. The silicon substrate, the insulation film and the semiconductor layer provide a SOI substrate. The hollow portion has a sidewall and a bottom. The anti-stripping film covers at least a boundary between the sidewall and the bottom of the hollow portion.
Claims14
A sensor comprising:
- a silicon substrate having a hollow portion, which is arranged on a backside of the silicon substrate;
- an insulation film disposed on a front side of the silicon substrate and covering the hollow portion;
- a heater disposed on the insulation film, made of a semiconductor layer, and configured to generate heat;
- and
- an anti-stripping film for protecting the insulation film from being removed from the silicon substrate,
- wherein the silicon substrate, the insulation film and the semiconductor layer provide a SOI substrate,
- wherein the hollow portion has a sidewall and a bottom, and
- wherein the anti-stripping film covers at least a boundary between the sidewall and the bottom of the hollow portion.
Dependencies are inferred from the claim text.