Method for manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang
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Abstract
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
Claims21
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon over a substrate;
- forming an oxide film on the semiconductor film;
- disposing a material which contains a metal on the oxide film, the metal being capable of promoting crystallization of silicon;
- heating the semiconductor film so that the metal diffuses through the oxide film so as to be introduced into the semiconductor film whereby the semiconductor film is crystallized.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon over a substrate;
- forming an oxide film on a selected region of the semiconductor film;
- disposing a material which contains a metal on the oxide film, the metal being capable of promoting crystallization of silicon;
- heating the semiconductor film so that the metal diffuses through the oxide film so as to be introduced into the semiconductor film whereby the semiconductor film is crystallized in such a manner that crystallization proceeds laterally from the selected region of the semiconductor film to a region adjacent to the selected region.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon on an insulating surface;
- forming a silicon containing film on the semiconductor film;
- disposing a material which contains a metal on the silicon containing film, the metal being capable of promoting crystallization of silicon;
- heating the semiconductor film so that the metal diffuses through the silicon containing film so as to be introduced into the semiconductor film whereby the semiconductor film is crystallized.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon on an insulating surface;
- forming a silicon containing film on a selected region of the semiconductor film;
- disposing a material which contains a metal on the silicon containing film, the metal being capable of promoting crystallization of silicon;
- heating the semiconductor film so that the metal diffuses through the silicon containing film so as to be introduced into the semiconductor film whereby the semiconductor film is crystallized in such a manner that crystallization proceeds laterally from the selected region of the semiconductor film to a region adjacent to the selected region.
Dependencies are inferred from the claim text.