Pattern forming method
AssigneePanasonic Corporation
InventorsMasayuki Endou, Masaru Sasago
Life of this patent
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Abstract
A first resist film is formed on a substrate, and first pattern exposure is performed such that the first resist film is irradiated with exposure light through a first mask. Then, the first resist film is developed, thereby forming a first resist pattern out of the first resist film. Subsequently, a nano-carbon material is attached to the surface of the first resist pattern, and then a second resist film is formed on the substrate including the first resist pattern. Thereafter, second pattern exposure is performed such that the second resist film is irradiated with exposure light through a second mask. Then, the second resist film is developed, thereby forming a second resist pattern out of the second resist film.
Claims19
A pattern forming method, comprising the steps of:
- (a) forming a first resist film on a substrate;
- (b) irradiating the first resist film with exposure light through a first mask, thereby performing first pattern exposure;
- (c) developing the first resist film after step (b), thereby forming a first resist pattern out of the first resist film;
- (d) attaching a nano-carbon material to a surface of the first resist pattern after step (c);
- (e) forming a second resist film on the substrate including the first resist pattern after step (d);
- (f) irradiating the second resist film with exposure light through a second mask, thereby performing second pattern exposure;
- and
- (g) developing the second resist film after step (f), thereby forming a second resist pattern out of the second resist film.
A pattern forming method, comprising the steps of:
- (a) forming a first resist film on a substrate;
- (b) irradiating the first resist film with exposure light through a first mask with a liquid provided on the first resist film, thereby performing first pattern exposure;
- (c) developing the first resist film after step (b), thereby forming a first resist pattern out of the first resist film;
- (d) attaching a nano-carbon material to a surface of the first resist pattern after step (c);
- (e) forming a second resist film on the substrate including the first resist pattern after step (d);
- (f) irradiating the second resist film with exposure light through a second mask with a liquid provided on the second resist film, thereby performing second pattern exposure;
- and
- (g) developing the second resist film after step (f), thereby forming a second resist pattern out of the second resist film.
Dependencies are inferred from the claim text.