Semiconductor device having linear-shaped gate electrodes of different transistor types with uniformity extending portions of different lengths

An integrated circuit device, comprising:

• a substrate region that forms part of a substrate of the integrated circuit device,
• a gate electrode level region that forms part of a gate electrode level of the integrated circuit device, the gate electrode level region formed over the substrate region, wherein the gate electrode level region includes a plurality of linear conductive segments each formed to have a respective length and a respective width as measured parallel to the substrate region, wherein a size of the length of a given linear conductive segment is greater than or equal to a size of the width of the given linear conductive segment, wherein the plurality of linear conductive segments are formed to have their lengths extend in a first direction in a parallel manner, and
• wherein the plurality of linear conductive segments includes a first linear conductive segment having a first portion that forms a gate electrode of a first transistor of a first transistor type, the first linear conductive segment also having a second portion that extends over a non-active expanse of the substrate region away from the gate electrode of the first transistor of the first transistor type, and
• wherein the plurality of linear conductive segments includes a second linear conductive segment having a first portion that forms a gate electrode of a first transistor of a second transistor type, the second linear conductive segment also having a second portion that extends over the non-active expanse of the substrate region away from the gate electrode of the first transistor of the second transistor type, and
• wherein the non-active expanse of the substrate region extends between the first transistor of the first transistor type and the first transistor of the second transistor type, and
• wherein a length of the second portion of the first linear conductive segment is different than a length of the second portion of the second linear conductive segment.