US 7,989,266 B2 · Methods for separating individual semiconductor devices from a carrier

Abstract

A wafer of integrated circuits may be bonded to a carrier wafer using a layer of bonding material. The thickness of the wafer of integrated circuits may then be reduced using a series of grinding operations. After grinding, backside processing operations may be performed to form scribe channels that separate the die from each other and to form through-wafer vias. The scribe channels may be formed by dry etching and may have rectangular shapes, circular shapes, or other shapes. A pick and place tool may have a heated head. The bonding layer material may be based on a thermoplastic or other material that can be released by application of heat by the heated head of the pick and place tool. The pick and place tool may individually debond each of the integrated circuits from the carrier wafer and may mount the debonded circuits in packages.

Claims16

Dependent claims

A method, comprising:

fabricating a wafer of integrated circuits;
bonding the wafer of integrated circuits to a carrier with a layer of bonding material;
and
with a pick and place tool, debonding a given integrated circuit by removing the given integrated circuit from the carrier while other integrated circuits from the wafer remain bonded to the carrier, wherein the carrier has a planar surface and wherein debonding the given integrated circuit from the carrier comprises heating the given integrated circuit using a heated head in the pick and place tool to weaken the layer of bonding material and moving the given integrated circuit laterally with respect to the planar surface to remove the given integrated circuit from the layer of bonding material in a shearing motion.

1 more element

Dependencies are inferred from the claim text.

Methods for separating individual semiconductor devices from a carrier

Life of this patent

Methods for separating individual semiconductor devices from a carrier

Life of this patent

Abstract

Claims16