Solid-state imaging device
AssigneeSony Corporation
InventorJohn Rennie
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes a light-receiving portion, an optical filter layer, and quantum dots. The light receiving portion, where a photoelectric conversion is carried out, is formed in a semiconductor substrate. The optical filter layer is directly formed on or formed through another layer on the surface of the semiconductor substrate in which the light-receiving portion is formed. Quantum dots having substantially equal diameters are formed in the optical filter layer. The quantum dots have higher refractive indexes than the refractive index of the optical filter layer in which the quantum dots are embedded.
Claims17
A solid-state imaging device, comprising:
- a light-receiving portion, where a photoelectric conversion is carried out, formed in a semiconductor substrate;
- an optical filter layer formed above the surface of the semiconductor substrate in which the light-receiving portion is formed;
- and
- quantum dots having substantially equal diameters formed in the optical filter layer,
- wherein the quantum dots have higher refractive indexes than the refractive index of the optical filter layer in which the quantum dots are embedded, and further
- wherein the quantum dots are formed from Si material that is applied over the light-receiving portion during formation of the optical filter layer, and
- wherein the optical filter layer in which the quantum dots are embedded is made of silicon nitride.
A solid-state imaging device comprising:
- a light-receiving portion formed in a semiconductor substrate, the light receiving portion configured to carry out photoelectric conversion;
- an optical filter layer formed on a surface of the semiconductor substrate;
- and
- quantum dots having substantially equal diameters formed in the optical filter layer,
- wherein the quantum dots have higher refractive indexes than the refractive index of the optical filter layer in which the quantum dots are embedded, and
- wherein the optical filter layer in which the quantum dots are embedded is made of silicon nitride.
Dependencies are inferred from the claim text.