Quantum dot infrared photodetector apparatus
AssigneeAcademia Sinica
InventorsShiang-Yu Wang, Hong-Shi Ling, Ming-Cheng Lo, Chien-Ping Lee
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Abstract
The present invention is disclosed that a device capable of normal incident detection of infrared light to efficiently convert infrared light into electric signals. The device includes a substrate, a first contact layer formed on the substrate, an active layer formed on the first contact layer, a barrier layer formed on the active layer and a second contact layer formed on the barrier layer, wherein the active layer includes multiple quantum dot layers.
Claims47
A quantum dot infrared photodetector apparatus, comprising:
- a semiconductor substrate;
- a first contact layer formed on the semiconductor substrate;
- a barrier layer formed on the first contact layer;
- a quantum dot active layer formed on the barrier layer, wherein the quantum dot active layer including:
- a first quantum well layer;
- a quantum dot layer formed on the first quantum well layer;
- a confinement enhancing layer formed on the quantum dot layer;
- a second quantum well layer formed on the confinement enhancing layer;
- and
- a barrier layer formed on the second quantum well layer;
- and
- a second contact layer formed on the barrier layer formed to form the quantum dot infrared photodetector apparatus.
A quantum dot infrared photodetector apparatus, comprising:
- a semiconductor substrate;
- a first contact layer formed on the semiconductor substrate;
- a barrier layer formed on the first contact layer;
- a quantum dot active layer formed on the barrier layer, wherein the quantum dot active layer including:
- a first quantum well layer;
- a quantum dot layer formed on the first quantum well layer;
- a confinement enhancing layer formed on the quantum dot layer;
- a second quantum well layer formed on the confinement enhancing layer;
- and
- a barrier layer formed on the second quantum well layer;
- a plurality of the quantum dot active layers formed on the barrier layer;
- and
- a second contact layer formed on the plurality of the quantum dot active layers to form the quantum dot infrared photodetector apparatus.
A quantum dot active layer comprises:
- a first quantum well layer formed on a barrier layer;
- a quantum dot layer formed on the first quantum well layer;
- a confinement enhancing layer formed on the quantum dot layer;
- a second quantum well layer formed on the confinement enhancing layer;
- and
- a barrier layer formed on the second quantum well layer.
Dependencies are inferred from the claim text.