US 7,977,133 B2 · Method of fabricating vertical structure compound semiconductor devices

Abstract

A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a metal support structure in place of the substrate. In one aspects the step of fabricating a metal support structure in place of the substrate includes the step of plating the metal support structure using at least one of electroplating and electro-less plating. In one aspect, the vertical structure is a GaN-based vertical structure, the crystal substrate includes sapphire and the metal support structure includes copper. Advantages of the invention include fabricating vertical structure LEDs suitable for mass production with high reliability and high yield.

Claims8

Dependent claims

A method of fabricating a vertical structure opto-electronic device, comprising the step of:

fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate;
removing the substrate using a laser lift-off process;
and
fabricating a metal support structure in place of the substrate, said metal support structure being formed of a material that includes Cu;
wherein fabricating the metal support structure comprises the steps of:
forming a first metal layer including Cu or Cu alloy over the opto-electronic device;
and
forming a second metal layer including Cu or Cu alloy over the first metal layer;
wherein the forming the first metal layer forms the first metal layer with a slower plating rate than the forming the second metal layer forms the second metal layer.

6 more elements

Dependencies are inferred from the claim text.

Method of fabricating vertical structure compound semiconductor devices

Life of this patent

Method of fabricating vertical structure compound semiconductor devices

Life of this patent

Abstract

Claims8