Thin film emitter-absorber apparatus and methods

A tunable infrared emitter comprising:

• a first electrically conductive layer including a plurality of discrete surface elements formed on or in the layer;
• an electrically insulating intermediate layer defining a first surface in communication with the electrically conductive surface layer;
• a second, continuous electrically conductive layer in communication with a second surface of the electrically insulating intermediate layer;
• and
• an infrared source in thermal communication with at least one of the first electrically conductive layer, the electrically insulating layer and the second, continuous electrically conductive layer, the infrared source generating broadband infrared radiation, the plurality of discrete surface elements electromagnetically coupling at least a portion of the broadband infrared radiation,
• wherein the first electrically conductive layer, the electrically insulating intermediate layer, and the second continuous, electrically conductive layer form a wavelength selective element having at least one infrared reflection or absorption-emission band;
• and
• wherein the wavelength selective element comprises a material having a material property that is variable in response to an external signal applied to the device, and wherein variation of the material property tunes the at least one reflection or absorption-emission band;
• and
• wherein the wavelength selective element interacts with the broadband infrared radiation to produce a narrowband infrared emission.

A controllable wavelength selective device, comprising:

• a first electrically conductive layer including a plurality of discrete surface elements formed on or in the layer;
• an electrically insulating intermediate layer defining a first surface in communication with the electrically conductive surface layer;
• a second, continuous electrically conductive layer in communication with a second surface of the electrically insulating intermediate layer, wherein at least one of the first electrically conductive layer;
• the electrically insulating intermediate layer;
• and the second, continuous electrically conductive layer comprises a material having an electrical conductivity which is controlled in response to an external signal applied to the device;
• wherein the first electrically conductive layer, the electrically insulating intermediate layer, and the second continuous, electrically conductive layer form a wavelength selective element having at least one reflection or absorption-emission band;
• and
• wherein a property of the at least one reflection or absorption-emission band is controlled in response to the conductivity of the material.

A method of manufacturing a wavelength selective device comprising:

• forming a continuous, electrically thin conductive ground layer on a substrate;
• applying an electrically thin insulating layer to a top surface of the ground layer;
• forming an electrically thin outer conductive layer on the electrically thin insulating layer,
• forming a plurality of discrete surface elements on or in the outer conductive layer;
• forming a wavelength selective element having at least one infrared reflection or absorption-emission band comprising the electrically thin conductive ground layer, the electrically thin insulating layer, and the electrically thin outer conductive layer;
• and
• wherein forming the wavelength selective surface comprises forming the wavelength selective surface to comprise a material having a material property that is variable in response to an external signal applied to the device, wherein variation of the material property tunes the at least one reflection or absorption-emission band.