# US 7,972,919 B2 · Vertical PNP transistor and method of making same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,972,919 B2 - Document ID: US7972919B2 - Status: Granted - Kind: B2 - Application number: 11/160,956 - Filed: 2005-07-18 - Published: 2007-01-18 - Granted: 2011-07-05 - Earliest claimed: 2005-07-18 - Assignees: International Business Machines Corporation - Inventors: Peter B. Gray; Benjamin T. Voegeli - Web page: https://patentgrep.com/patent/US7972919B2 ## CPC - H10D 10/891: {comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors} - H10D 10/021: {of heterojunction BJTs [HBT]} - H10D 84/0109: {the at least one component covered by H10D12/00 or H10D30/00 being a MOS device} - H10D 84/0121: {the complementary BJTs being vertical BJTs} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10D 84/401: {Combinations of FETs or IGBTs with BJTs} - H10D 84/673: {Vertical complementary BJTs} - Y10S 438/969: Simultaneous formation of monocrystalline and polycrystalline regions - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ## Abstract The present invention relates to a device structure located in a semiconductor substrate and containing high performance vertical NPN and PNP transistors. Specifically, the vertical PNP transistor has an emitter region, and the vertical NPN transistor has an intrinsic base region. The emitter region of the vertical PNP transistor and the intrinsic base region of the vertical NPN transistor are located in a single silicon germanium-containing layer, and they both contain single crystal silicon germanium. The present invention also relates to a method for fabricating such a device structure based on collateral modification of conventional fabrication processes for CMOS and bipolar devices, with few or no additional processing steps. ## Claims ### Claim 1 A method for forming a vertical PNP transistor in a semiconductor substrate while forming a CMOS device and a vertical NPN transistor, said method comprising: a first step or set of steps for concurrently forming at least a first portion of the CMOS device and a collector region of the vertical PNP transistor; a second step or set of steps for concurrently forming at least a second portion of the CMOS device and an intrinsic base region of the vertical PNP transistor; a third step or set of steps for concurrently forming at least a third portion of the CMOS device and an extrinsic base region of the vertical PNP transistor; and a fourth step or set of steps for concurrently forming at least a portion of the vertical NPN transistor and an emitter region of the vertical PNP transistor, wherein the emitter region of the vertical PNP transistor and an intrinsic base region of the vertical NPN transistor both consist essentially of a single crystal material, wherein an upper surface of the emitter region of the vertical PNP transistor is aligned and co-planar with an upper surface of the intrinsic base region of the vertical NPN transistor along a direction parallel to a top surface of the semiconductor substrate. ### Claim 2 (depends on 1) The method of claim 1, wherein the vertical NPN transistor has an intrinsic base region, and wherein the emitter region of the vertical PNP transistor and the intrinsic base region of the vertical NPN transistor are located in a single silicon germanium-containing layer. ### Claim 3 (depends on 1) The method of claim 1, wherein the collector region of the vertical PNP transistor is formed by a p-type ion implantation step that concurrently forms p-well implants for the CMOS device. ### Claim 4 (depends on 1) The method of claim 1, wherein the CMOS device comprises a NFET, and wherein the intrinsic base region of the vertical PNP transistor is formed by an n-type ion implantation step that concurrently forms extension implants for the NFET. ### Claim 5 (depends on 1) The method of claim 1, wherein the CMOS device comprises a PFET, and wherein the intrinsic base region of the vertical PNP transistor is formed by a halo implantation step that concurrently forms halo implants for the PFET. ### Claim 6 (depends on 1) The method of claim 1, wherein the intrinsic base region of the vertical PNP transistor is formed by an n-type ion implantation step that forms collector pedestal implants for the vertical NPN transistor. ### Claim 7 (depends on 1) The method of claim 1, wherein the CMOS device comprises a NFET, the extrinsic base region of the vertical PNP transistor is formed by an n-type ion implantation step that concurrently forms source/drain implants for the NFET. ### Claim 8 (depends on 1) The method of claim 1, wherein the single crystal material of the emitter region is made of a single crystal SiGe material, and the single crystal material of the intrinsic base region is made of a single crystal SiGe material. ### Claim 9 (depends on 1) The method of claim 1, wherein the emitter region of the vertical PNP transistor is formed by one or more steps that forms the intrinsic base region of the vertical NPN transistor. ### Claim 10 (depends on 9) The method of claim 9, wherein an etch window in the emitter region of the vertical PNP transistor is formed by a selective etching step that forms an etch window in the intrinsic base region of the vertical NPN transistor. ### Claim 11 (depends on 10) The method of claim 10, wherein a single silicon germanium-containing layer is epitaxially grown over single crystal substrates exposed through said etch windows to form a single crystal emitter in the emitter region of the vertical PNP transistor and a single crystal intrinsic base in the intrinsic base region of the vertical NPN transistor. ### Claim 12 (depends on 11) The method of claim 11, wherein said single silicon germanium-containing layer epitaxially grows over polycrystalline substrates outside the emitter region of the vertical PNP transistor and the intrinsic base region of the vertical NPN transistor to form polycrystalline structures outside said emitter region and said base region. ### Claim 13 (depends on 11) The method of claim 11, wherein doping concentration in the single crystal emitter of the vertical PNP transistor is increased by a p-type ion implantation that forms an extrinsic base for the vertical NPN transistor.