Display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorAtsushi Umezaki
Life of this patent
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorAtsushi Umezaki
Estimating the term…
By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.
A semiconductor device comprising:
A semiconductor device comprising:
A display device comprising:
Dependencies are inferred from the claim text.