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US 7,964,107 B2Granted
Methods using block copolymer self-assembly for sub-lithographic patterning
AssigneeMicron Technology, Inc.
InventorDan B. Millward
Life of this patent
Estimating the term…
Abstract
Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.
Claims76
A method for sub-lithographic patterning of a substrate, the method comprising:
- providing a block copolymer having an inherent periodicity of Lo;
- providing a substrate comprising a plurality of self-assembled copolymer defined trenches, wherein each trench of the plurality of trenches has a width of nLo, wherein n is from 1 to 15;
- depositing the block copolymer on the substrate;
- and
- annealing the block copolymer to allow the block copolymer to self-assemble.
2 more elements
A method for patterning a substrate, the method comprising:
- providing a first block copolymer having an inherent periodicity of Lo;
- providing a second block copolymer having an inherent periodicity of L′o;
- providing a substrate having a surface comprising a plurality of weirs of height Y to form a surface topography of weirs and trenches, wherein:
- each trench has a floor that is neutral-wetting with respect to each block of the first block copolymer;
- each trench has two sidewalls that are selectively wetted by one block of the first block copolymer;
- each trench has a width of nLo, wherein n is from 1 to 15;
- and
- the weir width/trench width ratio=mL′o/nLo, wherein m is from 1 to 15;
- depositing the first block copolymer on the substrate surface to form a layer of thickness less than or equal to Y;
- annealing the first block copolymer layer to allow the first block copolymer to self-assemble and form within each trench a first set of lamellae that are substantially perpendicular to the substrate surface and substantially in register with each trench sidewall;
- crosslinking a portion of the first set of lamellae that comprises a first block of the self-assembled first block copolymer;
- removing at least a portion of material forming the weirs to form at least one opening having a depth of Y′, wherein:
- the at least one opening has a floor that is neutral-wetting with respect to each block of the second block copolymer;
- the at least one opening has two sidewalls that are selectively wetted by one block of the second block copolymer;
- and
- the at least one opening has a width of mL′o, wherein m is from 1 to 15;
- depositing the second block copolymer on the substrate surface to form a layer of thickness less than or equal to Y′;
- and
- annealing the second block copolymer layer to allow the second block copolymer to self-assemble and form within the at least one opening a second set of lamellae that are substantially perpendicular to the substrate surface and substantially in register with each opening sidewall.
16 more elements
A method for patterning a substrate, the method comprising:
- providing a first block copolymer having an inherent periodicity of Lo;
- providing a second block copolymer having an inherent periodicity of L′o;
- providing a substrate having a surface;
- depositing a layer of thickness Y on the substrate surface;
- and
- selectively etching the layer to form a plurality of weirs of height Y to form a surface topography of weirs and trenches, wherein:
- each trench has a floor that is neutral-wetting with respect to each block of the first block copolymer;
- each trench has two sidewalls that are selectively wetted by one block of the first block copolymer;
- each trench has a width of nLo, wherein n is from 1 to 15;
- and
- the weir width/trench width ratio=mL′o/nLo, wherein m is from 1 to 15;
- depositing the first block copolymer on the substrate surface to form a layer of thickness less than or equal to Y;
- annealing the first block copolymer layer to allow the first block copolymer to self-assemble and form within each trench a first set of lamellae that are substantially perpendicular to the substrate surface and substantially in register with each trench sidewall;
- crosslinking a portion of the first set of lamellae that comprises a first block of the self-assembled first block copolymer;
- removing at least a portion of material forming the weirs to form at least one opening having a depth of Y′, wherein:
- the at least one opening has a floor that is neutral-wetting with respect to each block of the second block copolymer;
- the at least one opening has two sidewalls that are selectively wetted by one block of the second block copolymer;
- and
- the at least one opening has a width of mL′o, wherein m is from 1 to 15;
- depositing the second block copolymer on the substrate surface to form a layer of thickness less than or equal to Y′;
- and
- annealing the second block copolymer layer to allow the second block copolymer to self-assemble and form within the at least one opening a second set of lamellae that are substantially perpendicular to the substrate surface and substantially in register with each opening sidewall.
19 more elements
A method for forming sub-lithographic conductive lines, the method comprising:
- providing a block copolymer having an inherent periodicity of Lo;
- providing a substrate comprising a plurality of self-assembled copolymer defined trenches, wherein each trench of the plurality of trenches has two sidewalls and a width of nLo, wherein n is from 1 to 15;
- depositing the block copolymer on the substrate surface;
- annealing the block copolymer to allow the block copolymer to self-assemble and form within each trench a set of lamellae that are substantially perpendicular to the substrate surface and substantially in register with each trench sidewall;
- crosslinking a first portion of the set of lamellae, wherein the first portion comprises lamellae that comprise a first block of the self-assembled block copolymer;
- selectively removing a second portion of the set of lamellae, wherein the second portion comprises lamellae that comprise a second block of the self-assembled block copolymer;
- etching the substrate surface using the crosslinked lamellae as an etch mask to form sub-lithographic trenches;
- optionally removing any remaining polymeric material;
- and
- depositing a conductive material into the sub-lithographic trenches to form sub-lithographic conductive lines.
7 more elements
A method for forming a device, the method comprising:
- providing a block copolymer having an inherent periodicity of Lo;
- providing a substrate comprising a plurality of self-assembled copolymer defined trenches, wherein each trench of the plurality of trenches has two sidewalls and a width of nLo, wherein n is from 1 to 15;
- depositing the block copolymer on the substrate surface;
- annealing the block copolymer to allow the block copolymer to self-assemble and form within each trench a set of lamellae that are substantially perpendicular to the substrate surface and substantially in register with each trench sidewall;
- crosslinking a first portion of the set of lamellae, wherein the first portion comprises lamellae that comprise a first block of the self-assembled block copolymer;
- selectively removing a second portion of the set of lamellae, wherein the second portion comprises lamellae that comprise a second block of the self-assembled block copolymer;
- etching the substrate surface using the crosslinked lamellae as an etch mask to form sub-lithographic trenches;
- optionally removing any remaining polymeric material;
- and
- depositing a conductive material into the sub-lithographic trenches to form sub-lithographic conductive lines;
- and
- depositing one or more additional layers to form the device.
9 more elements
A method for isolating active areas, the method comprising:
- providing a block copolymer having an inherent periodicity of Lo;
- providing a substrate comprising a plurality of self-assembled copolymer defined trenches, wherein each trench of the plurality of trenches has two sidewalls and a width of nLo, wherein n is from 1 to 15;
- depositing the block copolymer on the substrate surface;
- annealing the block copolymer to allow the block copolymer to self-assemble and form within each trench a set of lamellae that are substantially perpendicular to the substrate surface and substantially in register with each trench sidewall;
- crosslinking a first portion of the set of lamellae, wherein the first portion comprises lamellae that comprise a first block of the self-assembled block copolymer;
- selectively removing a second portion of the set of lamellae, wherein the second portion comprises lamellae that comprise a second block of the self-assembled block copolymer;
- etching the substrate surface using the crosslinked lamellae as an etch mask to form sub-lithographic trenches;
- optionally removing any remaining polymeric material;
- and
- depositing an insulating material into the sub-lithographic trenches to isolate active areas.
7 more elements
A method for forming a device, the method comprising:
- providing a block copolymer having an inherent periodicity of Lo;
- providing a substrate comprising a plurality of self-assembled copolymer defined trenches, wherein each trench of the plurality of trenches has two sidewalls and a width of nLo, wherein n is from 1 to 15;
- depositing the block copolymer on the substrate surface;
- annealing the block copolymer to allow the block copolymer to self-assemble and form within each trench a set of lamellae that are substantially perpendicular to the substrate surface and substantially in register with each trench sidewall;
- crosslinking a first portion of the set of lamellae, wherein the first portion comprises lamellae that comprise a first block of the self-assembled block copolymer;
- selectively removing a second portion of the set of lamellae, wherein the second portion comprises lamellae that comprise a second block of the self-assembled block copolymer;
- etching the substrate surface using the crosslinked lamellae as an etch mask to form sub-lithographic trenches;
- optionally removing any remaining polymeric material;
- and
- depositing an insulating material into the sub-lithographic trenches to isolate active areas;
- and
- depositing one or more additional layers to form the device.
9 more elements
Dependencies are inferred from the claim text.