Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
AssigneeAdvanced Technology Materials, Inc.
InventorsPamela M. Visintin, Ping Jiang, Michael B. Korzenski, Mackenzie King
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Abstract
A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
Claims23
A removal composition, comprising hydrofluoric acid, at least one organic solvent, at least one chelating agent, and water,
- wherein the composition comprises less than 1 wt. % amine species and greater than 10 wt % hydrofluoric acid, based on the total weight of said composition, and wherein said chelating agent comprises a species selected from the group consisting of acac, hfac, tfac, bis(trimethylsilylamide) tetramer, glycine, alanine, succinic acid, malonic acid, nitrilotriacetic acid, iminodiacetic acid, EDTA, CDTA, and combinations thereof.
A kit comprising, in one or more containers, one or more of the following reagents for forming a removal composition, wherein said removal composition comprises hydrofluoric acid, at least one organic solvent, and at least one chelating agent, wherein the composition comprises less than 1 wt. % amine species and greater than 10 wt % hydrofluoric acid, based on the total weight of said composition, wherein said chelating agent comprises a species selected from the group consisting of acac, hfac, tfac, bis(trimethylsilylamide) tetramer, glycine, alanine, succinic acid, malonic acid, nitrilotriacetic acid, iminodiacetic acid, EDTA, CDTA, and combinations thereof, and wherein the kit is adapted to form a removal composition suitable for removing material selected from the group consisting of low-k dielectric material, etch stop material, metal stack material, and combinations thereof from a microel ectronic device having said material thereon.
A method of removing material from a microelectronic device having said material thereon, said method comprising contacting a microelectronic device structure with a removal composition for sufficient time to at least partially remove material selected from the group consisting of low-k dielectric material, etch stop material, metal stack material, and combinations thereof, from the microelectronic device structure, wherein the removal composition includes hydrofluoric acid, at least one organic solvent, at least one chelating agent, and water, wherein the composition comprises less than 1 wt. % amine species and greater than 10 wt % hydrofluoric acid, based on the total weight of said composition, and wherein said chelating agent comprises a species selected from the group consisting of acac, hfac, tfac, bis(trimethylsilylamide) tetramer, glycine, alanine, succinic acid, malonic acid, nitrilotriacetic acid, iminodiacetic acid, EDTA, CDTA, and combinations thereof.
Dependencies are inferred from the claim text.