Etching of nano-imprint templates using an etch reactor

A method for processing a photolithographic reticle, comprising:

• positioning a mold on a first layer of resist material disposed on a reticle having a metal photomask layer formed on an optically transparent substrate;
• curing the resist material on the reticle;
• removing the mold to leave an imprint on the cured resist material;
• positioning the imprinted reticle on a support member in a processing chamber;
• etching recessed regions of the imprinted resist material to expose portions of the metal photomask layer using a plasma formed in the processing chamber;
• etching the exposed portions of the metal photomask layer through the imprinted resist material the using the plasma;
• depositing a second layer of resist material on the etched metal photomask layer;
• patterning the second layer of resist material to expose an attenuating material;
• and
• plasma etching the exposed portions of the attenuating material through the patterned second of resist material to form a phase-shifting photomask.

A method for processing a photolithographic reticle, comprising:

• positioning a reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on an optically transparent substrate and an imprinted resist material deposited on the metal photomask layer;
• introducing a processing gas comprising an oxygen containing gas, a chlorine containing gas, and a halogen containing gas into the processing chamber;
• etching recessed regions of the imprinted resist material to expose portions of the metal photomask layer using a plasma formed from the processing gas;
• and
• etching the exposed portions of the metal photomask layer through the imprinted resist material the using the plasma.

A method for processing a photolithographic reticle, comprising:

• providing a reticle having a metal photomask layer formed on an optically transparent substrate and an imprinted resist material deposited on the metal photomask layer;
• etching recessed regions of the imprinted resist material to expose portions of the metal photomask layer in a first etching step;
• and
• etching the exposed portions of the metal photomask layer through the imprinted resist material in a second etching step, wherein both of the first and second etching steps utilize a plasma formed from a processing gas comprising an oxygen containing gas, a chlorine containing gas, and a halogen containing gas.