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US 7,951,274 B2Granted
Diamond electrode, method for producing same, and electrolytic cell
AssigneeSumitomo Electric Hardmetal Corp.
InventorsShigeru Yoshida, Katsuhito Yoshida, Toshiya Takahashi, Takahisa Iguchi, Fuminori Higuchi
Life of this patent
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Abstract
A diamond electrode includes a conductive silicon substrate having a plurality of pores. The diamond electrode also includes a conductive diamond covering the conductive silicon substrate. The inner wall surfaces of the plurality of pores are at an angle of 60° to 85° with respect to a substrate of the conductive silicon substrate.
Claims10
A diamond electrode comprising
- a conductive silicon substrate having a plurality of pores, wherein the plurality of pores pass through the substrate;
- and
- a conductive diamond covering said conductive silicon substrate wherein the inner wall surfaces of said plurality of pores are at an angle of 60° to 85° with respect to a substrate of said conductive silicon substrate.
Dependencies are inferred from the claim text.