Ion source apparatus and cleaning optimized method thereof

A cleaning optimized method for use with an ion source apparatus in which a plasma is formed by supplying an implantation ion source gas to a plasma chamber, and ion beams extracted from the plasma pass through an extraction electrode system comprising a plurality of electrodes for creating an electric field to which ion source materials from the ion beam accrete to form an insulation layer of ion source material,

• wherein the method comprising steps of:
• supplying a rare gas instead of the ion source gas to the plasma chamber thus forming plasma based on the rare gas and extracting a rare gas ion beam from the plasma based on the rare gas;
• adjusting an extraction voltage of the extraction electrode system at a given value or adjusting a supply amount of the rare gas at a given value to adjust a diameter of the rare gas ion beam to control sputtering of the insulation layer as the rare gas ion beam collides with the insulation layer adhering to the plurality of electrodes of said extraction electrode system.

A method for cleaning an ion source apparatus in which a plasma is formed by supplying an implantation ion source gas to a plasma chamber, and ion beams are extracted from the plasma chamber through an extraction electrode system comprising a plurality of electrodes by means of an electric field, an optimized cleaning method for removing deposited insulation layers produced by ions from the implantation ion source gas accreting to and collecting over an electrode surface of the extraction electrode system comprising the steps of:

• supplying a rare gas instead of the implantation ion source gas to the plasma chamber to form a plasma based on the rare gas, and extracting a rare gas ion beam from the plasma chamber causing ions in the rare gas ion beam to collide with the electrode surface of the extraction electrode system and sputter etch the electrode surface of the extraction electrode system;
• and
• changing a beam diameter of the rare gas ion beam by adjusting a plasma generating parameter of the rare gas supplied to the plasma chamber and/or adjusting an extraction voltage of the extraction electrode system to control a sputtering rate of the rare gas ion beam and maximize sputtering and removing of the deposited insulation layers from the electrode surface of the extraction electrode system.