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US 7,943,922 B2Granted
Nitrogenated carbon electrode for chalcogenide device and method of making same
AssigneeOvonyx, Inc.
InventorJeffrey P. Fournier
Life of this patent
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Abstract
A nitrogenated carbon electrode suitable for use in a chalcogenide device and method of making the same are described. The electrode comprises nitrogenated carbon and is in electrical communication with a chalcogenide material. The nitrogenated carbon material may be produced by combining nitrogen and vaporized carbon in a physical vapor deposition process.
Claims25
An electronic device, comprising:
- a programmable resistance material;
- and
- a first electrode in electrical communication with said programmable resistance material, said first electrode comprising carbon and nitrogen;
- wherein the atomic concentration of carbon in said first electrode is greater than or equal to 60% and the atomic concentration of nitrogen in said first electrode is less than or equal to 40%.
1 more element
An electronic device, comprising:
- an S-type threshold switching material;
- and
- a first electrode in electrical communication with said S-type threshold switching material, said first electrode comprising carbon and nitrogen;
- wherein the atomic concentration of carbon in said first electrode is greater than or equal to 60% and the atomic concentration of nitrogen in said first electrode is less than or equal to 40%.
1 more element
Dependencies are inferred from the claim text.