Vibration sensor and method for manufacturing the vibration sensor

A method for manufacturing a vibration sensor comprising:

• forming a sacrifice layer at one part of a front surface of a semiconductor substrate comprising monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate;
• forming a thin film protective film with a material having resistance to the etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer;
• forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer;
• opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate;
• forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layer isotropically by the etchant after the etchant reaches the front surface of the semiconductor substrate, and then etching the semiconductor substrate anisotropically by using crystal-oriented etching from a front side by the etchant spread to a space formed after the sacrifice layer is removed;
• and
• forming a holder for supporting the thin film on an upper surface of the semiconductor substrate by removing the thin film protective film partially,
• wherein a projection is formed on the front surface of the thin film by arranging the sacrifice layer at one part of a forming region of the thin film.

A method for manufacturing a vibration sensor comprising:

• forming a sacrifice layer at one part of a front surface of a semiconductor substrate comprising monocrystalline silicon with a material having resistance to a first etchant for etching the semiconductor substrate;
• forming a thin film protective film with a material having resistance to the first etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer;
• forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer;
• opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate;
• etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the first etchant from the back surface window;
• etching the sacrifice layer isotropically by applying a second etchant from the back side of the semiconductor substrate after the first etchant reaches the front surface of the semiconductor substrate;
• etching the semiconductor substrate anisotropically by using crystal-oriented etching from a front side by again applying the first etchant from the back side of the semiconductor substrate to a space formed after the sacrifice layer is etching-removed;
• and
• forming a holder for supporting the thin film on an upper surface of the semiconductor substrate by removing the thin film protective film partially,
• wherein a vent hole for communicating the front side and the back side of the thin film is formed between the holders.

A method for manufacturing a vibration sensor comprising:

• forming a sacrifice layer at one part of a front surface of a semiconductor substrate comprising monocrystalline silicon with a material having resistance to a first etchant for etching the semiconductor substrate;
• forming a thin film protective film with a material having resistance to the first etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer,
• forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer;
• opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate;
• etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the first etchant from the back surface window;
• etching the sacrifice layer isotropically by applying a second etchant from the back side of the semiconductor substrate after the first etchant reaches the front surface of the semiconductor substrate;
• etching the semiconductor substrate anisotropically by using crystal-oriented etching from a front side by again applying the first etchant from the back side of the semiconductor substrate to a space formed after the sacrifice layer is etching-removed;
• and
• forming a holder for supporting the thin film on an upper surface of the semiconductor substrate by removing the thin film protective film partially,
• wherein a projection is formed on the front surface of the thin film by arranging the sacrifice layer at one part of a forming region of the thin film.