Betavoltaic cell
AssigneeCornell Research Foundation, Inc.
InventorsMVS Chandrashekhar, Christopher Ian Thomas, Michael G. Spencer
Life of this patent
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Abstract
High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC.
Claims29
A Betavoltaic cell comprising:
- a SiC substrate;
- structures formed of semiconductor, wherein the structures comprise p-n junctions, and wherein there are voids proximal to the structures;
- and
- electrical contacts formed on the structures, wherein the contacts are adapted to minimize beta radiation backscatter losses.
A Betavoltaic cell comprising:
- a semiconductor substrate;
- at least one p-n junction formed of semiconductor;
- and
- at least one contact electrically coupled to the at least one p-n junction, wherein the at least one contact is adapted to minimize beta radiation backscatter losses.
A Betavoltaic cell comprising:
- a SiC substrate;
- high aspect ratio pillars supported by the substrate having voids between the pillars;
- cathode or anode contacts formed on the pillars, wherein the cathode or anode contacts are adapted to minimize beta radiation backscatter losses;
- an anode or cathode contact formed on a back side of the substrate;
- and
- a beta radiation fuel disposed in the voids.
A Betavoltaic cell comprising:
- a semiconductor substrate;
- structures formed of semiconductor, wherein the structures comprise p-n junctions, and wherein there are voids proximal to the structures;
- cathode or anode contacts formed on the structures, wherein the cathode or anode contacts are adapted to minimize beta radiation backscatter losses;
- an anode or cathode contact formed on a back side of the substrate;
- and
- a cap formed of semiconductor.
Dependencies are inferred from the claim text.