Method and apparatus for uniform microwave treatment of semiconductor wafers
AssigneeLambda Technologies, Inc.
InventorsIftikhar Ahmad, Keith R. Hicks
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AssigneeLambda Technologies, Inc.
InventorsIftikhar Ahmad, Keith R. Hicks
Estimating the term…
A microwave heating system comprises a microwave applicator cavity; a microwave power supply to deliver power to the applicator cavity; a dielectric support to support a generally planar workpiece; a dielectric gas manifold to supply a controlled flow of inert gas proximate to the periphery of the workpiece to provide differential cooling to the edge relative to the center; a first temperature measuring device configured to measure the temperature near the center of the workpiece; and, a second temperature measuring device configured to measure the temperature near the edge of the workpiece. The gas flow is controlled to minimize the temperature difference from center to edge, and may be recipe driven or controlled in real time, based on the two temperature measurements. The method is particularly useful for monolithic semiconductor wafers, various semiconducting films on substrates, and dielectric films on semiconducting wafers.
An apparatus for processing semiconductor wafers comprising:
A method for processing semiconductor wafers comprising the steps of:
A method for processing semiconductors comprising the steps of:
Dependencies are inferred from the claim text.