Semiconductor device with a high thermal dissipation efficiency
AssigneeInternational Business Machines Corporation
InventorsThomas J. Brunschwiler, Michel Despont, Mark A. Lantz, Bruno Michel, Peter Vettiger
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Abstract
A semiconductor device having a higher thermal dissipation efficiency includes a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.
Claims9
A semiconductor device comprising:
- an adhesion layer coating a backside of the semiconductor device;
- and
- a thermally conducting structure formed on a carrier, said thermally conducting structure comprising:
- a plurality of structural cooling elements of a high aspect ratio selected from a group consisting of:
- an array of freestanding fins, studs, and frames and a grid of connected fins;
- a cooling liquid;
- a manifold layer for supplying the cooling liquid, said manifold layer comprising fluid inlets and outlets;
- and
- a very thin layer of soldering applied between the manifold layer and the backside of the semiconductor device, wherein said very thin layer is less than 1 μm;
- wherein the manifold layer is sealed to the semiconductor device by melting the soldering with the adhesion layer, such that the thermally conducting structure becomes attached to the adhesion layer.
Dependencies are inferred from the claim text.