Semiconductor device including a metal-to-semiconductor superlattice interface layer and related methods

A semiconductor device comprising:

• a semiconductor layer having spaced-apart source and drain regions therein defining a channel region therebetween;
• a source metal contact coupled to the source region;
• and
• a drain metal contact coupled to the drain region;
• at least one superlattice interface layer coupled directly between the source region and said source contact, and coupled directly between the drain region and said drain contact;
• said superlattice interface layer comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions, and wherein at least some silicon atoms from opposing base silicon portions are chemically bound together with the chemical bonds traversing the at least one intervening oxygen monolayer.

A method for making a semiconductor device comprising:

• forming a superlattice interface layer on a semiconductor layer and coupled directly thereto;
• and
• forming a metal layer on the superlattice interface layer and coupled directly thereto;
• the superlattice interface layer comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, and wherein at least some atoms from opposing base semiconductor portions are chemically bound together with the chemical bonds traversing the at least one intervening non-semiconductor monolayer.