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US 7,928,017 B2Granted
Method of forming nanowire and method of manufacturing semiconductor device comprising the nanowire
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-youn Kim, Joong S. Jeong, Eun-ju Bae
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Abstract
A method of forming a nanowire and a semiconductor device comprising the nanowire are provided. The method of forming a nanowire includes forming a patterned SiyGe1-y layer (where, y is a real number that satisfies 0≦y<1) on a base layer, and forming a first oxide layer and at least one nanowire within the first oxide layer by performing a first oxidation process on the patterned SiyGe1-y layer.
Claims19
A method of forming a nanowire comprising:
- forming a stacked structure by sequentially stacking an insulating layer, a Si layer, and a SixGe1-x layer (where x is a real number that satisfies 0<x<1);
- performing a first condensing process to condense Ge from the SixGe1-x layer into the Si layer, the first condensing process including a first oxidation process, the first oxidation process performed on the SixGe1-x layer to transform the Si layer into a SiyGe1-y layer (where, y is a real number that satisfies 0≦y<1);
- forming a patterned SiyGe1-y layer by patterning the SiyGe1-y layer;
- and
- performing a second condensing process to condense Ge present in the outer region of the SiyGe1-y layer into the inner region of the SiyGe1-y layer, the second condensing process including a second oxidation process, the second oxidation process performed on the patterned SiyGe1-y layer to form a first oxide layer and at least one nanowire within the first oxide layer.
2 more elements
A method of manufacturing a semiconductor device comprising:
- forming a stacked structure by sequentially stacking an insulating layer, a Si layer, and a SixGe1-x layer (where x is a real number that satisfies 0<x<1);
- performing a first condensing process to condense Ge from the SixGe1-x layer into the Si layer, the first condensing process including a first oxidation process, the first oxidation process performed on the SixGe1-x layer to transform the Si layer into a SiyGe1-y layer (where, y is a real number that satisfies 0≦y<1);
- forming a patterned SiyGe1-y layer by patterning the SiyGe1-y layer;
- performing a second condensing process to condense Ge present in the outer region of the SiyGe1-y layer into the inner region of the SiyGe1-y layer, the second condensing process including a second oxidation process, the second oxidation process performed on the patterned SiyGe1-y layer to form a first oxide layer and at least one nanowire within the first oxide layer;
- removing the first oxide layer;
- and
- forming first and second conductive regions that respectively contact an end and the other end of the nanowire.
4 more elements
Dependencies are inferred from the claim text.