Memory and method for checking reading errors thereof

A memory, comprising:

• a memory-cell array, for receiving and storing a first data fragment, reading the first data fragment from the memory-cell array to be a second data fragment;
• an error correction circuit, for generating a first error correction code (ECC) according to the first data fragment and generating a second error correction code according to the second data fragment;
• and
• an n-bit counter, for generating a first count index and a second count index, wherein the first count index and the second count index are respectively corresponding to a quantity of one kind of binary value occurred in the first data fragment and a quantity of one kind of binary value occurred in the second data fragment, and n is a positive integer;
• wherein the memory determines whether the second data fragment is equal to the first data fragment according to the first count index, the second count index, the first error correction code and the second error correction code;
• wherein when the second data fragment has y bit errors as compared to the first data fragment, the memory corrects the second data fragment to be the first data fragment and outputs the second data fragment, and y is a positive integer smaller or equal to n.