Nitride based semiconductor laser device with oxynitride protective coatings on facets
AssigneeSanyo Electric Co., Ltd.
InventorsShingo Kameyama, Yasuhiko Nomura, Ryoji Hiroyama, Masayuki Hata
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Abstract
One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.
Claims8
A nitride based semiconductor laser device comprising:
- a nitride based semiconductor layer having an optical waveguide extending in a substantial [0001] direction and having one facet composed of a substantial (0001) plane and the other facet composed of a substantial (000-1) plane as a pair of cavity facets;
- a first protective film provided on said one facet and including oxygen as a constituent element;
- and
- a second protective film provided on said other facet and including nitrogen as a constituent element,
- wherein the intensity of laser light emitted from said one facet is higher than the intensity of laser light emitted from said other facet,
- said first protective film further includes nitrogen as a constituent element, the first protective film's oxygen composition ratio being higher than the nitrogen composition ratio, and
- said second protective film further includes oxygen as a constituent element, the second protective film's nitrogen composition ratio being higher than the oxygen composition ratio.
Dependencies are inferred from the claim text.