Back to results
US 7,924,649 B2Granted
Internal source voltage generation circuit and generation method thereof
AssigneeHynix Semiconductor Inc.
InventorJae-Boum Park
Life of this patent
Estimating the term…
Abstract
An internal source voltage generation circuit includes main source voltage driving means configured to drive an internal source voltage terminal to a predetermined voltage level; and additional source voltage driving means configured to additionally drive the internal source voltage terminal in response to a data strobe signal.
Claims18
A semiconductor memory device, comprising:
- main source voltage driving means configured to drive a peripheral source voltage terminal, which applies a source voltage to a peripheral circuit located in a peripheral region;
- and
- additional source voltage driving means configured to additionally drive the peripheral source voltage terminal in response to a data strobe signal.
A method for generating an internal source voltage, comprising:
- driving an internal source voltage terminal with a source voltage;
- generating, in response to a data strobe signal, a driving control signal for a period that is determined based on a delay amount that is determined based on an internal source voltage and determined based on an additional source voltage;
- and
- additionally driving the internal source voltage terminal with the additional source voltage in response to the driving control signal.
1 more element
Dependencies are inferred from the claim text.