Implementing boosted wordline voltage in memories

A method for implementing a boosted wordline voltage in a memory comprising the steps of:

• providing a bootstrap capacitor, said bootstrap capacitor being connected to a voltage supply of a wordline driver output stage;
• providing a switching transistor coupled to said bootstrap capacitor;
• applying a precharge signal to said switching transistor;
• said switching transistor being controlled by said precharge signal and driving said bootstrap capacitor high, said bootstrap capacitor supplying a boosted voltage level to said voltage supply, providing a boosted voltage level of a selected wordline;
• providing said switching transistor coupled to said bootstrap capacitor including providing a P-channel field effect transistor (PFET) connected between a voltage supply rail and a first side of said bootstrap capacitor supplying the boosted voltage level;
• and
• providing a pair of series connected inverters receiving an input of said precharge signal and having an output connected to a second side of said bootstrap capacitor.

A design structure embodied in a machine readable medium used in a design process, the design structure comprising:

• a wordline voltage boosting circuit tangibly embodied in the machine readable medium used in the design process, said wordline voltage boosting circuit for implementing boosted wordline voltage in a memory, said wordline voltage boosting circuit including
• a precharge signal;
• a bootstrap capacitor, said bootstrap capacitor being connected to a voltage supply of a wordline driver output stage;
• a switching transistor coupled to said bootstrap capacitor, said switching transistor being controlled by said precharge signal, driving said bootstrap capacitor high, said bootstrap capacitor supplying a boosted voltage level to said voltage supply, providing a boosted voltage level of a selected wordline, and
• a pair of series connected inverters receiving an input of said precharge signal and having an output connected to a second side of said bootstrap capacitor, wherein the design structure, when read and used in the manufacture of a semiconductor chip produces a chip comprising said wordline voltage boosting circuit.