Method of programming non-volatile memory device
AssigneeHynix Semiconductor Inc.
InventorHee Youl Lee
Life of this patent
Estimating the term…
Abstract
A programming method of a non-volatile memory device may include providing a memory device in which a first word line is preprogrammed in an erase operation of a memory block, pre-programming a second word line according to a program command, and programming the first word line.
Claims21
A method of programming a non-volatile memory device, comprising:
- performing a pre-program operation on a word line which is next to a selected word line in the direction of a drain select line by applying pre-program voltage to the word line and pass voltage to remaining word lines;
- and
- performing a program operation on the selected word line by applying program voltage to the selected word line and pass voltage to unselected word lines.
A method of programming a non-volatile memory device, comprising:
- performing a pre-program operation on a selected word line by applying a pre-program voltage to the selected word line, a first pass voltage to a word line next to the selected word line in the direction of a drain selected line, and a second pass voltage to remaining word lines;
- and
- performing a program operation on the selected word line by applying a program voltage to the selected word line and a pass voltage to unselected word lines.
A method of programming a non-volatile memory device, comprising:
- performing pre-program and pre-program verification operations on word lines on a per bit basis, and
- performing a program and program verification operations on a selected word line.
A method of programming a non-volatile memory device having an even word line group and an odd word line group, comprising:
- performing a pre-program operation on the word line group which belongs to a selected word line by applying pre-program voltage to a word line next to the selected word line in the direction of a drain select line;
- and
- performing a program operation on the selected word line.
A method of programming a non-volatile memory device, comprising:
- performing a pre-program operation on a selected word line;
- and
- performing a program operation on a LSB (Least Significant Bit) page of the selected word line by applying a program voltage to the selected word line, a first pass voltage to a word line next to the selected word line in the direction of a drain selected line, and a second pass voltage to remaining word lines,
- wherein the pre-program operation and the program operation on the LSB page are performed at the same time by increasing a pre-program voltage to the program voltage.
Dependencies are inferred from the claim text.