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US 7,924,611 B2Granted
Page buffer circuit with reduced size and methods for reading and programming data with the same
AssigneeHynix Semiconductor Inc.
InventorsJin Yong Seong, Sam Kyu Won
Life of this patent
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Abstract
A page buffer circuit with reduced size and methods for reading and programming data is provided. In the reading operation, the page buffer circuit reads out a data bit by alternatively using a higher bit register or a lower bit register regardless of whether the data bit read from the multi-level cell is a higher bit or a lower bit, thereby reducing the circuit area and improves the performance of operation.
Claims9
A method for programming a data bit by a page buffer circuit coupled to a bitline in a flash memory device having a plurality of wordlines and a plurality of multi-level cells, each of the multi-level cells being coupled to the bitline and one of the wordlines, the method comprising:
- initializing a higher-bit register and a lower-bit register;
- storing a first or second internal data bit into the higher-bit register in response to a first or second higher read-control signal and an input data bit received through an input/output node;
- transferring the first or second internal data bit from the higher-bit register to the lower-bit register through a sensing node in response to a first program control signal;
- detecting a voltage of the sensing node which is determined by the first or second internal data bit and storing a first lower sensing data bit into the lower-bit register in accordance with a result of the detection in response to a first lower read-control signal;
- reading a lower data bit from one of the multi-level cells that corresponds to a selected wordline and a selected bitline;
- detecting a voltage of the sensing node which is determined by the lower data bit and storing a second lower sensing data bit into the lower-bit register in accordance with a result of the detection in response to the first lower read-control signal;
- generating a lower verifying data bit in response to the second lower sensing data bit and determining whether a logical value of the lower verifying data bit is an established value;
- outputting the second lower sensing data bit to the selected bitline through the sensing node in response to a second program control signal while a program voltage is being supplied to the selected wordline when the logical value of the lower verifying data bit is different from the established value, making the second lower sensing data bit programmed into the selected multi-level cell;
- and
- repeating the steps of reading, storing the second lower sensing data bit, determining, and outputting until the logical value of the lower verifying data bit reaches the established value.
7 more elements
A method for programming a data bit by a page buffer circuit connected to a bitline in a flash memory device having a plurality of wordlines and a plurality of multi-level cells, each of the multi-level cells being connected to the bitline and one of the wordlines, the method comprising the steps of:
- initializing a higher-bit register and a lower-bit register;
- storing a first or second internal data bit into the higher-bit register in response to a first or second higher read-control signal and an input data bit received through an input/output node;
- storing a first lower sensing data bit into the lower-bit register with reference to the first or second internal data bit and a first lower data bit read out from a selected one among the plural multi-level cells, which is connected to a selected one of a plurality of bitlines corresponding to the bitline and a selected one of the plurality of wordlines;
- generating a first higher verifying data bit and first verifying whether a logical value of the first higher verifying data bit is equal to an established value, in response to the first or second internal data bit;
- first outputting the first or second internal data bit to the selected bitline through a sensing node in response to a first program control signal, while a program voltage is being supplied to the selected wordline, when the logical value of the first higher verifying data bit is different from the established value, making the first or second internal data bit programmed into the selected multi-level cell;
- generating a second higher verifying data bit and second verifying whether a logical value of the second higher verifying data bit is equal to the established value, in response to a higher data bit read out from the selected multi-level cell, when a first verifying voltage is being supplied to the selected wordline;
- second outputting the higher data bit to the selected bitline through the sensing node in response to the first program control signal, while the program voltage is being supplied to the selected wordline, when the logical value of the second higher verifying data bit is different from the established value, making the higher data bit programmed into the selected multi-level cell;
- repeating the second verifying and outputting steps until the logical value of the second higher verifying data bit reaches the established value;
- generating a lower verifying data bit and third verifying whether a logical value of the lower verifying data bit is an established value, in response to a second lower data bit read out from the selected multi-level cell, while a second verifying voltage is being supplied to the selected wordline, when the logical value of the second higher verifying data bit is equal to the established value;
- third outputting the second lower data bit to the selected bitline through the sensing node in response to a second program control signal, while the program voltage is being supplied to the selected wordline, when the logical value of the lower verifying data bit is different from the established value, making the second lower data bit programmed into the selected multi-level cell;
- and
- repeating the third verifying and outputting steps until the logical value of the lower verifying data bit reaches the established value.
9 more elements
Dependencies are inferred from the claim text.