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US 7,924,610 B2Granted
Method for conducting over-erase correction
AssigneeElite Semiconductor Memory Technology Inc.
InventorsChung Zen Chen, Chung Shan Kuo, Tzeng Ju Hsue, Ching Tsann Leu
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Abstract
A method for conducting an over-erase correction describes the steps of: conducting a first erase and verification operation; using an FN soft program to correct over-erased cells if bit line leakage is found after the first erase and verification operation; conducting a second erase and verification operation; and using a hot carrier HC soft program to correct over-erased cells if bit line leakage is found after the second erase and verification operation.
Claims6
A method for conducting an over-erase correction, comprising the steps of:
- (a) conducting a first erase and verification operation;
- (b) conducting a first bit line check;
- (c) using a Fowler-Nordheim (FN) soft program to correct over-erased cells if bit line leakage is found after the first erase and verification operation;
- (d) conducting a second bit line check;
- (e) conducting a second erase and verification operation;
- and
- (f) using a hot carrier (HC) soft program to correct over-erased cells if bit line leakage is found after the second erase and verification operation.
4 more elements
Dependencies are inferred from the claim text.