Back to results
US 7,924,603 B2Granted
Resistance variable memory with temperature tolerant materials
AssigneeMicron Technology, Inc.
InventorKristy A. Campbell
Life of this patent
Estimating the term…
Abstract
A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichiometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of forming such a memory device.
Claims37
A memory device, comprising:
- a first electrode;
- a second electrode;
- a Sb2Se3 glass material between said first electrode and said second electrode;
- and
- a metal-chalcogenide material between said Sb2Se3 glass material and said second electrode,
- wherein said Sb2Se3 glass material and said metal-chalcogenide material are provided within a via.
3 more elements
A method of forming a resistance variable memory device, comprising:
- providing a substrate;
- providing a first electrode over said substrate;
- providing a second electrode over said substrate;
- forming a Sb2Se3 glass material in a via between said first electrode and said second electrode;
- and
- forming a metal-chalcogenide material in said via and between said Sb2Se3 glass material and said second electrode.
3 more elements
A memory device, comprising:
- a first electrode;
- a second electrode;
- a Sb2Se3 glass material between said first electrode and said second electrode;
- and
- a metal-chalcogenide material between said Sb2Se3 glass material and said second electrode,
- wherein the location of said second electrode defines the location of said memory device over a substrate.
3 more elements
Dependencies are inferred from the claim text.