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US 7,924,594 B2Granted
Data writing and reading method for memory device employing magnetic domain wall movement
AssigneeSamsung Electronics Co., Ltd.
InventorsChee-Kheng Lim, Eun-sik Kim
Life of this patent
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Abstract
A method of data recording and reading for a memory device employing magnetic domain wall movement. The memory device includes a writing track, an interconnecting layer formed on the writing track, and a recording track formed on the interconnecting layer.
Claims13
A method of reading data in a memory device comprising a writing track having a magneto-resistance sensor, an interconnecting layer disposed on a portion of the writing track, and a data recording track disposed on the interconnecting layer, and employing a movement of a magnetic domain wall, the method comprising:
- moving magnetic domains of the data recording track through the interconnecting layer toward the writing track;
- and
- detecting magnetization directions of the magnetic domains moved from the data recording track to the writing track using the magneto-resistance sensor.
Dependencies are inferred from the claim text.