RuO0.8 electrode and structure
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsSteven R. Collins, Abron S. Toure, Steven D. Bernstein
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Abstract
A structure including a TiW oxygen plasma mask, a photoresist mask above and in contact with the TiW oxygen plasma mask, a 2000 angstrom thick oxygen plasma vaporizable RuO0.8 electrode layer partially under and in contact with the TiW oxygen plasma mask, the RuO0.8 electrode layer not being completely covered by a pattern of the TiW oxygen plasma mask, a first side of a PZT ferroelectric layer in contact with the RuO0.8 electrode layer and a second RuO0.8 electrode layer in contact with a second side of the PZT ferroelectric layer.
Claims2
A structure, comprising:
- (a) a TiW oxygen plasma mask, the TiW oxygen plasma mask having a mask pattern;
- (b) a 2000 angstrom thick oxygen plasma vaporizable RuO0.8 electrode layer partially under and in contact with the TiW oxygen plasma mask, the 2000 angstrom thick oxygen plasma vaporizable RuO0.8 electrode layer not being completely covered by the mask pattern of the TiW oxygen plasma mask;
- (c) a PZT ferroelectric layer in contact with the 2000 angstrom thick oxygen plasma vaporizable RuO0.8 electrode layer;
- (d) a second RuO0.8 electrode layer in contact with the PZT ferroelectric layer;
- and
- (e) a photoresist mask above and in contact with the TiW oxygen plasma mask, the photoresist mask having a same size mask pattern as the mask pattern of the TiW oxygen plasma mask.
Dependencies are inferred from the claim text.