Liquid crystal display device and driving method for fabricating the same
AssigneeLG Display Co., Ltd.
InventorSang Yeup Lee
Life of this patent
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Abstract
A liquid crystal display device includes a gate line on a substrate; a data line defining a pixel region by crossing the gate line; a thin film transistor formed at a crossing position between the gate line and the data line; a passivation layer protecting the thin film transistor; a pixel electrode connected with the thin film transistor; a common electrode generating an electric field with the pixel electrode; and a plurality of grooves on the passivation layer, wherein at least one of the pixel electrode and the common electrode is arranged at intervals in the pixel region, and the grooves are formed at intervals on the passivation layer disposed between the at least one of the pixel electrode and the common electrode arranged at intervals in the pixel region.
Claims6
A liquid crystal display device, comprising:
- a gate line on a substrate;
- a data line defining a pixel region by crossing the gate line;
- a thin film transistor formed at a crossing position between the gate line and the data line;
- a passivation layer protecting the thin film transistor;
- a pixel electrode connected with the thin film transistor;
- a common electrode generating an electric field with the pixel electrode;
- and
- a plurality of grooves on the passivation layer, wherein at least one of the pixel electrode and the common electrode is arranged at intervals in the pixel region, and the grooves are formed at intervals on the passivation layer disposed between the at least one of the pixel electrode and the common electrode arranged at intervals in the pixel region,
- wherein a difference between a height of the passivation layer with the grooves between the common electrodes or the pixel electrodes and a height of the passivation layer without the grooves is in a range of about 0.1 μm to 0.7 μm.
A method for fabricating a liquid crystal display device, comprising:
- forming a gate line and a data line defining a pixel region by crossing each other on a substrate;
- forming a thin film transistor at the crossing position between the gate line and the data line;
- forming a passivation layer on the substrate including the TFT so as to protect the thin film transistor;
- forming a pixel electrode in connection with the thin film transistor;
- forming a common electrode to generate an electric field with the pixel electrode;
- and
- forming a plurality grooves on the passivation layer, wherein at least one of the pixel electrode and the common electrode is arranged at intervals in the pixel region, and the plurality of grooves are formed at intervals on the passivation layer disposed between the at least one of the pixel electrode and the common electrode arranged at intervals in the pixel region,
- wherein a difference between a height of the passivation layer formed with the grooves between the common electrodes and the pixel electrodes, and a height of the passivation layer without the grooves is in a range of about 0.1 μm to about 0.7 μm.
Dependencies are inferred from the claim text.