Semiconductor device and method of driving the semiconductor device

A semiconductor device comprising:

• a first rectifying element;
• a second rectifying element;
• and
• capacitor means,
• wherein:
• an electric potential V1 of a first electric power source is imparted to a first electrode of the first rectifying element;
• a second electrode of the first rectifying element is electrically connected to a first electrode of the capacitor means and a first electrode of the second rectifying element;
• a first signal having an electric potential greater than or equal to an electric potential V2 and less than or equal to an electric potential V2′ is input to a second electrode of the second rectifying element;
• a second signal having an electric potential that is greater than or equal to an electric potential V3 and less than or equal to (V3+an electric potential VData), or, greater than or equal to (V3−VData) and less than or equal to V3, is input to a second electrode of the capacitor means;
• and
• a signal having an electric potential equal to any one of (V1−|Vth1|), (V2+Vth2), and (V1−|Vth1|±VData) is obtained from the second electrode of the first rectifying element when a threshold voltage of the first rectifying element is taken as Vth1 and a threshold voltage of the second rectifying element is taken as Vth2.

A semiconductor device comprising:

• a first rectifying element;
• a second rectifying element;
• and
• capacitor means,
• wherein:
• an electric potential V1 of a first electric power source is imparted to the first electrode of the first rectifying element;
• a second electrode of the first rectifying element is electrically connected to a first electrode of the capacitor means and a first electrode of the second rectifying element;
• a first signal having a voltage amplitude of an electric potential greater than or equal to an electric potential V2 and less than or equal to an electric potential V2′ is input to a second electrode of the second rectifying element;
• a second signal having an electric potential that is greater than or equal to an electric potential V3 and less than or equal to (V3+an electric potential VData), or greater than or equal to (V3−VData) and less than or equal to V3, is input to a second electrode of the capacitor means;
• and
• a signal having an electric potential equal to any one of (V1+Vth1), (V2′−Vth2), and (V1+Vth1±VData) is obtained from the second electrode of the first rectifying element when a threshold voltage of the first rectifying element is taken as Vth1 and a threshold voltage of the second rectifying element is taken as Vth2.

A semiconductor device comprising a plurality of pixels, each pixel including:

• a source signal line;
• a first gate signal line;
• a second gate signal line;
• a reset electric power source line;
• an electric current supply line;
• a first transistor;
• a second transistor;
• a third transistor;
• capacitor means;
• a diode;
• and
• a light emitting element,
• wherein:
• a gate electrode of the first transistor is electrically connected to the first gate signal line;
• a first electrode of the first transistor is electrically connected to the source signal line;
• a second electrode of the first transistor is electrically connected to a first electrode of the capacitor means;
• a second electrode of the capacitor means is electrically connected to a gate electrode of the second transistor, a first electrode of the second transistor, and a gate electrode of the third transistor;
• a second electrode of the second transistor is electrically connected to the reset electric power source line;
• a first electrode of the third transistor is electrically connected to the electric current supply line;
• a second electrode of the third transistor is electrically connected to a first electrode of the light emitting element;
• a first electrode of the diode is electrically connected to the gate electrode of the second transistor, the first electrode of the second transistor, and the gate electrode of the third transistor;
• and
• a second electrode of the diode is electrically connected to the second gate signal line.

A semiconductor device comprising a plurality of pixels, each pixel including:

• a source signal line;
• a first gate signal line;
• a second gate signal line;
• a reset electric power source line;
• an electric current supply line;
• a first transistor;
• a second transistor;
• a third transistor;
• a first capacitor means;
• a second capacitor means;
• and
• a light emitting element,
• wherein:
• a gate electrode of the first transistor is electrically connected to the first gate signal line;
• a first electrode of the first transistor is electrically connected to the source signal line;
• a second electrode of the first transistor is electrically connected to a first electrode of the first capacitor means;
• a second electrode of the first capacitor means is electrically connected to a gate electrode of the second transistor, a first electrode of the second transistor, and a gate electrode of the third transistor;
• a second electrode of the second transistor is electrically connected to the reset electric power source line;
• a first electrode of the third transistor is electrically connected to the electric current supply line;
• a second electrode of the third transistor is electrically connected to a light emitting element;
• a first electrode of the second capacitor means is electrically connected to the gate electrode of the second transistor, the first electrode of the second transistor, and the gate electrode of the third transistor;
• and
• a second electrode of the second capacitor means is electrically connected to the second gate signal line.

A method of driving a semiconductor device, the semiconductor device comprising:

• a first rectifying element having a first electrode and a second electrode;
• a second rectifying element having a first electrode and a second electrode;
• and
• capacitor means,
• wherein:
• an electric potential V1 of a first electric power source is imparted to a first electrode of the first rectifying element;
• a second electrode of the first rectifying element is electrically connected to a first electrode of the capacitor means and a first electrode of the second rectifying element;
• and
• a first signal having an electric potential greater than or equal to art electric potential. V2 and less than or equal to an electric potential V2′ is input to a second electrode of the second rectifying element;
• the method of driving the semiconductor device comprising:
• when a threshold voltage of the first rectifying element is taken as Vth1 and a threshold voltage of the second rectifying element is taken as Vth2,
• a first step of setting the electric potential of a second electrode of the second capacitor means to V2, and setting the electric potential of the second electrode of the first rectifying element to (V2+Vth2);
• and
• a second step of setting the electric potential of a second electrode of the second capacitor means to V2′, making the voltage between both electrodes of the first rectifying element converge to the threshold voltage Vth1, and setting the electric potential of the second electrode of the first rectifying element to (V1−|Vth1|).

A method of driving a semiconductor device, the semiconductor device comprising:

• a first rectifying element;
• a second rectifying element;
• and
• capacitor means,
• wherein:
• an electric potential V1 of a first electric power source is imparted to a first electrode of the first rectifying element;
• a second electrode of the first rectifying element is electrically connected to a first electrode of the capacitor means and a first electrode of the second rectifying element;
• a first signal having an electric potential greater than or equal to an electric potential V2 and less than or equal to an electric potential V2′ is input to a second electrode of the second rectifying element;
• and
• a second signal having an electric potential that is greater than or equal to an electric potential V3 and less than or equal to (V3+an electric potential VData), or greater than or equal to (V3−VData) and less than or equal to V3, is input to a second, electrode of the capacitor means;
• the method of driving the semiconductor device comprising:
• when a threshold voltage of the first rectifying element is taken as Vth1 and a threshold voltage of the second rectifying element is taken as Vth2,
• a first step of setting the electric potential of the second electrode of the second capacitor means to V2, and setting the electric potential of the second electrode of the first rectifying element to (V2+Vth2);
• a second step of setting the electric potential of a second electrode of the second capacitor means to V2′, making the voltage between both electrodes of the first rectifying element converge to the threshold voltage Vth1, and setting the electric potential of the second electrode of the first rectifying element to (V1−|Vth1|);
• and
• a third step of changing the electric potential of the second electrode of the capacitor means by VData, and setting the electric potential of the second electrode of the first rectifying element to (V1−|Vth1|±VData).

A method of driving a semiconductor device, the semiconductor device comprising:

• a first rectifying element;
• a second rectifying element;
• and
• capacitor means;
• wherein:
• an electric potential V1 of a first electric power source is imparted to the first electrode of the first rectifying element;
• a second electrode of the first rectifying element is electrically connected to a first electrode of the capacitor means and a first electrode of the second rectifying element;
• and
• a first signal having an electric potential greater than or equal to an electric potential V2 and less than or equal to an electric potential V2′ is input to a the second electrode of the second rectifying element;
• the method of driving the semiconductor device comprising:
• when a threshold voltage of the first rectifying element is taken as Vth1 and a threshold voltage of the second rectifying element is taken as Vth2,
• a first step of setting the electric potential of a second electrode of the second capacitor means to V2,′ and setting the electric potential of the second electrode of the first rectifying element to (V2′−|Vth2|);
• and
• a second step of setting the electric potential of a second electrode of the second capacitor means to V2, making the voltage between both electrodes of the first rectifying element converge to the threshold voltage Vth1, and setting the electric potential of the second electrode of the first rectifying element to (V1+Vth1).

A method of driving a semiconductor device, the semiconductor device comprising:

• a first rectifying element;
• a second rectifying element;
• and
• capacitor means,
• wherein:
• an electric potential V1 of a first electric power source is imparted to a first electrode of the first rectifying element;
• a second electrode of the first rectifying element is electrically connected to a first electrode of the capacitor means and a first electrode of the second rectifying element;
• a first signal having an electric potential greater than or equal to an electric potential V2 and less than or equal to an electric potential V2′ is input to a second electrode of the second rectifying element;
• and
• a second signal having an electric potential that is greater than or equal to an electric potential V3 and less than or equal to (V3+an electric potential VData), or greater than or equal to (V3−VData) and less than or equal to V3, is input, to a second electrode of the capacitor means;
• the method of driving the semiconductor device comprising:
• when a threshold voltage of the first rectifying element is taken as Vth1 and a threshold voltage of the second rectifying element is taken as Vth2,
• a first step of setting the electric potential of the second electrode of the second capacitor means to V2′, and setting the electric potential of the second electrode of the first rectifying element to (V2′−|Vth2|);
• a second step of setting the electric potential of a second electrode of the second capacitor means to V2, making the voltage between both electrodes of the first rectifying element converge to the threshold voltage Vth1, and setting the electric potential of the second electrode of the first rectifying element to (V1+Vth1);
• and
• a third step of changing the electric potential of the second electrode of the capacitor means by VData, and setting the electric potential of the second electrode of the first rectifying element to (V1+Vth1±VData).

A semiconductor device comprising:

• a plurality of pixels, each pixel comprising:
• a first transistor having a gate electrode, a first electrode electrically connected to the gate electrode, and a second electrode;
• a second transistor having a gate electrode, a first electrode, a second electrode;
• capacitor means;
• and
• a light emitting element,
• wherein:
• the first electrode of the first transistor is electrically connected to a first electrode of the capacitor means and the gate electrode of the second transistor,
• the second electrode of the first transistor is electrically connected to a reset electric power source line, and
• the first electrode of the second transistor is electrically connected to the light emitting element.