Polycrystalline silicon as an electrode for a light emitting diode and method of making the same
AssigneeThe Hong Kong University of Science and Technology
InventorsHoi Sing Kwok, Man Wong, Zhiguo Meng, Jiaxin Sun, Xiuling Zhu
Life of this patent
Estimating the term…
Abstract
Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.
Claims41
An organic light emitting device comprising:
- an anode for use in light-emission, of low temperature polycrystalline silicon;
- an anode modification layer for hole injection;
- a plurality of organic layers for electron and hole transport;
- an organic light emission layer;
- and
- a cathode.
An active matrix organic light emitting device comprising:
- an anode for use in light emission, of low temperature polycrystalline silicon;
- one or more light emission layers, wherein at least one said layer is an organic light emission layer;
- a cathode;
- and
- a transistor having at least one active island;
- wherein
- the anode comprises an active island of the transistor.
An active matrix display comprising an array of pixels, each of a plurality of said pixels comprising:
- an anode made of low temperature polycrystalline silicon;
- one or more light emission layers, wherein at least one said layer is an organic light emission layer;
- a cathode;
- and
- a thin film transistor.
Dependencies are inferred from the claim text.