Surface acoustic wave device

Abstract

A surface acoustic wave device including an SiO film has improved frequency temperature characteristics, prevents an increase in insertion loss, obtains a reflection coefficient of an electrode that is sufficiently high, and achieves more preferable resonant characteristics and filter characteristics. The surface acoustic wave device includes a LiNbO3 substrate having a plurality of grooves formed in an upper surface thereof, an IDT electrode primarily composed of Pt provided in the grooves, a SiO2 layer arranged so as to cover the upper surface of the LiNbO3 substrate and the IDT electrode, a surface of the SiO2 layer is planarized, a response of a Rayleigh wave is utilized, and Euler angles of the LiNbO3 substrate are in a range of (0°±5°, 208° to 228°, 0°±5°).

Dependencies are inferred from the claim text.